1 www.fairch ildsemi.com ?2010 fairchild semiconductor corporation FGY75N60SMD rev. c0 FGY75N60SMD 600 v, 75 a field stop igbt april 2013 absolute maximum ratings symbol description ratings unit v ces collector to emitter voltage 600 v v ges gate to emitter voltage 20 v i c collector current @ t c = 25 o c 150 a collector current @ t c = 100 o c 75 a i cm (1) pulsed collector current @ t c = 25 o c 225 a i f diode forward current @ t c = 25 o c 75 a diode forward current @ t c = 100 o c 50 a i fm (1) pulsed diode maximum forward current 225 a p d maximum power dissipation @ t c = 25 o c 750 w maximum power dissipation @ t c = 100 o c 375 w t j operating junction temperature -55 to +175 o c t stg storage temperature range -55 to +175 o c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 o c notes: 1: repetitive rating: pulse width limited by max. junction temperature. FGY75N60SMD 600 v, 75 a field stop igbt features ? high current capability ? low saturation voltage: v ce(sat) = 1.9 v @ i c = 75 a ? h igh input impedance ? fast switching : e off = 10 uj/a ?roh s compliant general description e c power-247 g c e g using novel field stop igbt technology, fairchild ? s new series of field stop 2 nd generation igbts offer the optimum performance for solar inverter, ups, welder and pfc applications where low conduction and switching losses are essential. applications ? solar inverter, ups, welder, pfc
2 www.fairchildsemi.com FGY75N60SMD 600 v, 75 a field stop igbt thermal characteristics symbol parameter typ. max. unit r jc (igbt) thermal resistance, junction to case - 0.2 o c /w r jc (diode) thermal resistance, junction to case - 0.7 o c /w r ja thermal resistance, junction to ambient - 40 o c /w package marking and ordering information device marking device package packaging type qty per tube FGY75N60SMD FGY75N60SMD power-247 tube 30ea electrical characteristi cs of the igbt t c = 25c unless otherwise noted symbol parameter test conditions min. typ. max. unit off ch aracteristics bv ces collector to emitter breakdown voltage v ge = 0v, i c = 250 a 600 - - v bv ces t j temperature coefficient of breakdown voltage v ge = 0v, i c = 250 a - 0.67 - v/ o c i ces collector cut-off current v ce = v ces , v ge = 0v - - 250 a i ges g-e leakage current v ge = v ges , v ce = 0v - - 400 na on characterist ics v ge(th) g-e threshold voltage i c = 250 a, v ce = v ge 3.5 5.0 6.5 v v ce(sat) collector to emitter saturation voltage i c = 75a , v ge = 15v - 1.90 2.50 v i c = 75a , v ge = 15v, t c = 1 75 o c - 2.14 - v dynamic ch aracteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz - 3800 - pf c oes output capacitance - 390 - pf c res reverse transfer capacitance - 105 - pf switching ch aracteristics t d(on) turn-on delay time v cc = 400v, i c = 75a, r g = 3 , v ge = 15v, inductive load, t c = 25 o c - 24 32 ns t r rise time - 56 73 ns t d(off) turn-off delay time - 136 177 ns t f fall time - 22 29 ns e on turn-on switching loss - 2.3 2.99 mj e off turn-off switching loss - 0.77 1.00 mj e ts total switching loss - 3.07 3.99 mj t d(on) turn-on delay time v cc = 400v, i c = 75a, r g = 3 , v ge = 15v, inductive load, t c = 175 o c - 23 - ns t r rise time - 53 - ns t d(off) turn-off delay time - 146 - ns t f fall time - 15 - ns e on turn-on switching loss - 3.60 - mj e off turn-off switching loss - 1.11 - mj e ts total switching loss - 4.71 - mj ?2010 fairchild semiconductor corporation FGY75N60SMD rev. c0
3 www.fairchildsemi.com FGY75N60SMD 600 v, 75 a field stop igbt electrical characteristi cs of the igbt t c = 25c unless otherwise noted q g total gate charge v ce = 400v, i c = 75a, v ge = 15v - 248 370 nc q ge gate to emitter charge - 28 42 nc q gc gate to collector charge - 129 195 nc electrical characteristi cs of the diode t c = 25c unless otherwise noted symbol parameter test conditions min. typ. max unit v fm diode forward voltage i f = 50a t c = 25 o c - 1.75 2.1 v t c = 175 o c - 1.35 - e rec reverse recovery energy i f = 50a, di f /dt = 200a/ s v r =400v t c = 175 o c - 0.14 - mj t rr diode reverse recovery time t c = 25 o c - 41 55 ns t c = 175 o c - 126 - q rr diode reverse recovery charge t c = 25 o c - 81 115 nc t c = 175 o c - 736 - ?2010 fairchild semiconductor corporation FGY75N60SMD rev. c0
4 www.fairchildsemi.com typical performance characteristics figure 1. typical output characteristics figure 2. typical output characteristics figure 3. typical saturation voltage figure 4. transfer characteristics characteristics figure 5. saturation voltage vs. case figure 6. saturation voltage vs. v ge temp erature at variant current level 012345 0 45 90 135 180 225 20v t c = 25 o c 15v 12v 10v v ge = 8v collector current, i c [a] collector-emitter voltage, v ce [v] 012345 0 45 90 135 180 225 20v t c = 175 o c 15v 12v 10v v ge = 8v collector current, i c [a] collector-emitter voltage, v ce [v] 012345 0 45 90 135 180 225 common emitter v ge = 15v t c = 25 o c t c = 175 o c collector current, i c [a] collector-emitter voltage, v ce [v] 24681012 0 45 90 135 180 225 common emitter v ce = 20v t c = 25 o c t c = 175 o c collector current, i c [a] gate-emitter voltage,v ge [v] 25 50 75 100 125 150 175 1.0 1.5 2.0 2.5 3.0 3.5 150a 75a i c = 40a common emitter v ge = 15v collector-emitter voltage, v ce [v] collector-emittercase temperature, t c [ o c ] 4 8 12 16 20 0 4 8 12 16 20 i c = 40a 75a 150a common emitter t c = -40 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v] ?2010 fairchild semiconductor corporation FGY75N60SMD rev. c0 FGY75N60SMD 600 v, 75 a field stop igbt
5 www.fairchildsemi.com FGY75N60SMD 600 v, 75 a field stop igbt typical performance characteristics figure 7. saturation voltage vs. v ge figure 8. saturation voltage vs. v ge figure 9. capacitance characteristics figure 10. gate charge characteristics figure 11. turn-off characteristics vs. figure 12. turn-on characteristics vs. 4 8 12 16 20 0 4 8 12 16 20 i c = 40a 75a 150a common emitter t c = 25 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v] 4 8 12 16 20 0 4 8 12 16 20 150a i c = 40a 75a common emitter t c = 175 o c collector-emitter voltage, v ce [ v ] gate-emitter voltage, v ge [v] 11 0 0 2000 4000 6000 8000 common emitter v ge = 0v, f = 1mhz t c = 25 o c c res c oes c ies capacitance [pf] collector-emitter voltage, v ce [v] 30 0 50 100 150 200 250 0 3 6 9 12 15 common emitter t c = 25 o c, i ce =75a 300v 400v v cc = 200v gate-emitter voltage, v ge [v] gate charge, q g [nc] 0 1020304050 10 100 200 common emitter v cc = 400v, v ge = 15v i c = 75a t c = 25 o c t c = 175 o c t d(on) t r switching time [ns] gate resistance, r g [ ] 0 1020304050 10 100 1000 common emitter v cc = 400v, v ge = 15v i c = 75a t c = 25 o c t c = 175 o c t d(off) t f switching time [ns] gate resistance, r g [ ] 5500 gate resistance gate resistance ?2010 fairchild semiconductor corporation FGY75N60SMD rev. c0
6 www.fairchildsemi.com FGY75N60SMD 600 v, 75 a field stop igbt typical performance characteristics figure 13. turn-off characteristics vs. figure 14. turn-on characteristics vs. collector current collector current figure 15. switching loss vs. collector current figure 16. switching lo ss vs. gate resistance figure 17. soa characteristics figure 18. turn off switching soa characteristics 0 30 60 90 120 150 5 10 100 200 common emitter v ge = 15v, r g = 3 t c = 25 o c t c = 175 o c t r t d(on) switching time [ns] collector current, i c [a] 0 306090120150 10 100 1000 common emitter v ge = 15v, r g = 3 t c = 25 o c t c = 175 o c t d(off) t f switching time [ns] collector current, i c [a] 0 1020304050 0.5 1 10 30 common emitter v cc = 400v, v ge = 15v i c = 75a t c = 25 o c t c = 175 o c e on e off switching loss [mj] gate resistance, r g [ ] 0306090120150 0.1 1 10 30 common emitter v ge = 15v, r g = 3 t c = 25 o c t c = 175 o c e on e off switching loss [mj] collector current, i c [a] 10 100 1000 1 10 100 300 safe operating area v ge = 15v, t c = 175 o c collector current, i c [a] collector-emitter voltage, v ce [v] 1 10 100 1000 0.1 1 10 100 500 1ms 10 ms dc *notes: 1 . t c = 25 o c 2 . t j = 175 o c 3. single pulse 10 s 100 s collector current, i c [a] collector-emitter voltage, v ce [v] ?2010 fairchild semiconductor corporation FGY75N60SMD rev. c0
7 www.fairchildsemi.com FGY75N60SMD 600 v, 75 a field stop igbt typical performance characteristics figure 19. current derating figu re 20. load current vs. frequency figure 21. forward characteristics figure 22. reverse current figure 23. stored charge figure 24. reverse recovery current 25 50 75 100 125 150 175 0 20 40 60 80 100 120 140 160 common emitter v ge = 15v collector current, i c [a] collector-emittercase temperature, t c [ o c] 1k 10k 100k 1m 0 50 100 150 200 250 t c = 100 o c t c = 75 o c square wave t j <= 175 o c, d = 0.5, v ce = 400v v ge = 15/0v, r g = 3 collector current, i c [a] switching frequency, f [hz] 0123 1 10 100 400 t c = 125 o c t c = 75 o c t c = 25 o c t c = 25 o c t c = 75 o c t c = 125 o c t c = 175 o c t c = 175 o c forward voltage, v f [v] forward current, i f [a] 0 100 200 300 400 500 600 0.01 0.1 1 10 100 1000 10000 t c = 175 o c t c = 125 o c t c = 75 o c t c = 25 o c reverse current, i ces [ a ] reverse voltage, v r [v] 0 20406080 0 150 300 450 600 750 900 t c = 25 o c t c = 175 o c di/dt = 200a/ s di/dt = 100a/ s stored recovery charge, q rr [nc] forward current, i f [a] 0 20406080 0 40 80 120 160 200 t c = 25 o c t c = 175 o c --- di/dt = 200a/ s di/dt = 100a/ s reverse recovery time, t rr [ns] forward current, i f [a] ?2010 fairchild semiconductor corporation FGY75N60SMD rev. c0
8 www.fairchildsemi.com FGY75N60SMD 600v, 75a field stop igbt typical performance characteristics figure 25. transient thermal impedance of igbt 1e-5 1e-4 1e-3 0.01 0.1 1 1e-3 0.01 0.1 0.3 0.01 0.02 0.1 0.05 0.2 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5 t 1 p dm t 2 figure 26. transient thermal impedance of diode 1e-5 1e-4 1e-3 0.01 0.1 1 0.005 0.01 0.1 1 0.01 0.02 0.1 0.05 0.2 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5 t 1 p dm t 2 ?2010 fairchild semiconductor corporation FGY75N60SMD rev. c0
9 www.fairchildsemi.com FGY75N60SMD 600 v, 75 a field stop igbt mechanical dimensions to2- 247d03 dimensions in millimeters ?2010 fairchild semiconductor corporation FGY75N60SMD rev. c0
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?2010 fairchild semiconductor corporation FGY75N60SMD 600 v, 75 a field stop igbt
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